STD5NK40Z-1

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STD5NK40Z-1 - Stmicroelectronics
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Краткое описание: 400V 3A N-CH MOSFET, 1.8 Ohm Rds(on), TO-251
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel SuperMESH™ Power MOSFET featuring 400V drain-source breakdown voltage and 3A continuous drain current. This through-hole component offers a low 1.8 Ohm maximum drain-source on-resistance and 45W power dissipation. Designed for efficient switching, it exhibits typical fall time of 11ns and turn-off delay of 22.5ns. Packaged in TO-251-3 (IPAK), this RoHS compliant device operates from -55°C to 150°C.
RoHS Compliant
Mount Through Hole
Width 2.4mm
Height 6.2mm
Length 6.6mm
Series SuperMESH™
Polarity N-CHANNEL
Fall Time 11ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 1.8R
Package/Case TO-251-3
RoHS Compliant Yes
Package Quantity 75
Input Capacitance 305pF
Power Dissipation 45W
Threshold Voltage 3.75V
Turn-On Delay Time 9.2ns
Radiation Hardening No
Turn-Off Delay Time 22.5ns
Reach SVHC Compliant No
Max Power Dissipation 45W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 1.8R
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 3A
Drain to Source Voltage (Vdss) 400V
Drain-source On Resistance-Max 1.8R
Drain to Source Breakdown Voltage 400V

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