STD5NK60ZT4

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STD5NK60ZT4 - Stmicroelectronics
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Краткое описание: 600V 5A N-CH MOSFET, 1.6R RdsOn, DPAK, SuperMESH
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel SuperMESH™ Power MOSFET, 600V drain-source breakdown voltage, 5A continuous drain current, and 1.6 Ohm maximum drain-source on-resistance. Features include a 90W maximum power dissipation, 25ns fall time, 36ns turn-off delay, and 16ns turn-on delay. This surface-mount device is housed in a DPAK package and operates within a temperature range of -55°C to 150°C. RoHS compliant.
RoHS Compliant
Mount Surface Mount
Width 6.2mm
Height 2.4mm
Length 6.6mm
Series SuperMESH™
Polarity N-CHANNEL
Fall Time 25ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 1.6R
Nominal Vgs 3.75V
Termination SMD/SMT
Package/Case DPAK
Current Rating 5A
RoHS Compliant Yes
DC Rated Voltage 650V
Package Quantity 1
Input Capacitance 690pF
Power Dissipation 90W
Turn-On Delay Time 16ns
Dual Supply Voltage 600V
On-State Resistance 1.6R
Turn-Off Delay Time 36ns
Reach SVHC Compliant No
Max Power Dissipation 90W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 1.6R
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 5A
Drain to Source Voltage (Vdss) 600V
Drain-source On Resistance-Max 1.6R
Drain to Source Breakdown Voltage 600V

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