STD5NM50T4
Не рекомендуется для новых проектов
Увеличить
Краткое описание:
500V N-CH MOSFET, 7.5A, 800mR RdsOn, DPAK
Дополнительная информация
N-channel Power MOSFET featuring 500V drain-source breakdown voltage and 7.5A continuous drain current. Offers low 800mΩ typical drain-source on-resistance. Designed for surface mount applications in a TO-252 package, with a maximum power dissipation of 100W. Includes fast switching characteristics with a 6ns fall time and 16ns turn-on delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| Series | MDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 6ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 800mR |
| Package/Case | TO-252 |
| Current Rating | 7.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 500V |
| Package Quantity | 2500 |
| Input Capacitance | 415pF |
| Power Dissipation | 100W |
| Threshold Voltage | 4V |
| Turn-On Delay Time | 16ns |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 100W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 800mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 7.5A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 800mR |
| Drain to Source Breakdown Voltage | 500V |
