STD5NM60T4
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Краткое описание:
600V N-Channel MOSFET, 1Ω RdsOn, 5A ID, DPAK
Дополнительная информация
N-Channel MDmesh™ POWER MOSFET featuring 600V drain-source breakdown voltage and 1 Ohm maximum drain-source on-resistance. This surface-mount device offers a continuous drain current of 5A and a maximum power dissipation of 96W. Key electrical characteristics include a 4V threshold voltage, 400pF input capacitance, and fast switching times with a 14ns turn-on delay and 10ns fall time. Packaged in DPAK for tape and reel, this RoHS compliant component operates from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| Series | MDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1R |
| Package/Case | DPAK |
| Current Rating | 5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Package Quantity | 1 |
| Input Capacitance | 400pF |
| Power Dissipation | 96W |
| Threshold Voltage | 4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 14ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 23ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 96W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 1R |
| Drain to Source Breakdown Voltage | 600V |
