STD60N3LH5
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Краткое описание:
48A, 30V, 8mR, N-CH, Power MOSFET, DPAK
Дополнительная информация
N-CHANNEL POWER MOSFET, DPAK package, featuring 30V drain-source breakdown voltage and 48A continuous drain current. Offers a low 8mΩ drain-source on-resistance and 60W maximum power dissipation. Designed for surface mounting with a fast 4.2ns fall time and 6ns turn-on delay. Operates across a wide temperature range from -55°C to 175°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| Series | STripFET™ V |
| Polarity | N-CHANNEL |
| Fall Time | 4.2ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 8mR |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.35nF |
| Power Dissipation | 60W |
| Threshold Voltage | 1.8V |
| Turn-On Delay Time | 6ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 19ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 60W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 8mR |
| Gate to Source Voltage (Vgs) | 22V |
| Continuous Drain Current (ID) | 48A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 8MR |
| Drain to Source Breakdown Voltage | 30V |
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