STD60NF3LLT4
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Краткое описание:
N-Channel 30V 60A 7.5mR Power MOSFET DPAK
Дополнительная информация
N-channel power MOSFET featuring 30V drain-source breakdown voltage and 60A continuous drain current. Offers low 7.5mΩ typical drain-source on-resistance and 9.5mΩ maximum. Designed for surface mounting in a DPAK package, this component operates from -55°C to 175°C with 100W maximum power dissipation. Includes fast switching characteristics with a 22ns turn-on delay and 36.5ns fall time. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | STripFET™ II |
| Polarity | N-CHANNEL |
| Fall Time | 36.5ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 9.5mR |
| Package/Case | DPAK |
| Current Rating | 60A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 1 |
| Input Capacitance | 2.21nF |
| Power Dissipation | 100W |
| Number of Elements | 1 |
| Turn-On Delay Time | 22ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 36.5ns |
| Max Power Dissipation | 100W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 7.5mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 9.5mR |
| Drain to Source Breakdown Voltage | 30V |
