STD60NF55LT4
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Краткое описание:
N-Ch MOSFET 55V 60A 15mR DPAK Power
Дополнительная информация
N-channel Power MOSFET featuring 55V drain-source breakdown voltage and 60A continuous drain current. This surface-mount device offers a low 0.012 Ohm drain-source resistance and 110W power dissipation. Designed with STripFET™ II technology, it operates within a -55°C to 175°C temperature range and is packaged in a DPAK for tape and reel distribution. Key switching characteristics include a 30ns turn-on delay and 35ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| Series | STripFET™ II |
| Polarity | N-CHANNEL |
| Fall Time | 35ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 15mR |
| Nominal Vgs | 2V |
| Termination | SMD/SMT |
| Package/Case | DPAK |
| Current Rating | 60A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 55V |
| Package Quantity | 2500 |
| Input Capacitance | 1.95nF |
| Power Dissipation | 110W |
| Threshold Voltage | 2V |
| Turn-On Delay Time | 30ns |
| Dual Supply Voltage | 55V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 80ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 110W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 14mR |
| Gate to Source Voltage (Vgs) | 15V |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain to Source Breakdown Voltage | 55V |
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