STD65N55LF3
Не рекомендуется для новых проектов
Краткое описание:
55V 80A N-CH Power MOSFET DPAK TO-252 SMT
Дополнительная информация
N-channel enhancement mode power MOSFET in a 3-pin DPAK (TO-252AA) surface-mount package. Features 55V drain-source voltage, 80A continuous drain current, and 8.5mΩ maximum drain-source on-resistance at 10V. This single-element transistor boasts a maximum power dissipation of 110W and operates across a temperature range of -55°C to 175°C. The lead-frame SMT package utilizes gull-wing leads for robust surface mounting.
| PCB | 2 |
| Tab | Tab |
| ECCN | EAR99 |
| Jedec | TO-252AA |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | SCR76 |
| Pin Count | 3 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | DPAK |
| AEC Qualified | Yes |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.3(Max) |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 6.2(Max) |
| Package Description | Deca Watt Package |
| Package Family Name | TO-252 |
| Package Height (mm) | 2.4(Max) |
| Package Length (mm) | 6.6(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 2.63(Max) |
| Max Operating Temperature | 175°C |
| Maximum Power Dissipation | 110000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ Vgs | 20@5VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 55V |
| Maximum Drain Source Resistance | 8.5@10VmOhm |
| Typical Input Capacitance @ Vds | 2200@25VpF |
| Maximum Continuous Drain Current | 80A |
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