STD6NK50ZT4

Не рекомендуется для новых проектов
STD6NK50ZT4 - Stmicroelectronics
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Краткое описание: 500V 5.6A N-CH MOSFET, 1.2R RdsOn, DPAK, SuperMESH
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Не рекомендуется для новых проектов (NOT RECOMMENDED)

Дополнительная информация

N-CHANNEL MOSFET, 500V Drain to Source Breakdown Voltage, 5.6A Continuous Drain Current, 1.2 Ohm Max Drain-Source On Resistance. Features Zener protection and SuperMESH™ technology. Packaged in a DPAK surface mount case, this component offers a 90W power dissipation and operates between -55°C and 150°C. Includes 12ns turn-on delay and 23ns fall time.
RoHS Compliant
Mount Surface Mount
Width 6.2mm
Height 2.4mm
Length 6.6mm
Series SuperMESH™
Polarity N-CHANNEL
Fall Time 23ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 1.2R
Nominal Vgs 3.75V
Package/Case DPAK
Current Rating 5.6A
RoHS Compliant Yes
DC Rated Voltage 500V
Package Quantity 1
Input Capacitance 690pF
Power Dissipation 90W
Threshold Voltage 3.75V
Number of Elements 1
Turn-On Delay Time 12ns
Radiation Hardening No
Turn-Off Delay Time 31ns
Reach SVHC Compliant No
Max Power Dissipation 90W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 1.2R
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 5.6A
Drain to Source Voltage (Vdss) 500V
Drain-source On Resistance-Max 1.2R
Drain to Source Breakdown Voltage 500V

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