STD70N10F4
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Краткое описание:
N-Ch MOSFET, 100V, 60A, 15mR, DPAK, SMT
Дополнительная информация
N-channel power MOSFET featuring 100V drain-source breakdown voltage and 60A continuous drain current. Offers low on-resistance with a maximum of 19.5mR at 10Vgs. Designed for surface mounting in a DPAK package, this component boasts a maximum power dissipation of 125W and operates across a wide temperature range from -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 30ns and fall time of 20ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | DeepGATE™, STripFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 19.5mR |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Input Capacitance | 5.8nF |
| Power Dissipation | 125W |
| Number of Elements | 1 |
| Turn-On Delay Time | 30ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 65ns |
| Max Power Dissipation | 125W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 15mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 19.5mR |
| Drain to Source Breakdown Voltage | 100V |
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