STD7N52DK3
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Краткое описание:
525V 6A N-CH Power MOSFET, DPAK, TO-252
Дополнительная информация
N-channel Power MOSFET featuring 525V drain-source voltage and 6A continuous drain current. This single-element transistor utilizes SuperFREDmesh 3 process technology and is housed in a 3-pin DPAK (TO-252AA) surface-mount package with gull-wing leads. Key specifications include a maximum gate-source voltage of ±30V, 1150mOhm drain-source resistance at 10V, and typical gate charge of 33nC. The Deca Watt Package has a maximum length of 6.6mm, width of 6.2mm, and height of 2.4mm, with a seated plane height of 2.63mm and pin pitch of 2.3mm.
| PCB | 2 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-252AA |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | SCR76 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | DPAK |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.3(Max) |
| Package Material | Plastic |
| Package Width (mm) | 6.2(Max) |
| Process Technology | SuperFREDmesh 3 |
| Package Description | Deca Watt Package |
| Package Family Name | TO-252 |
| Package Height (mm) | 2.4(Max) |
| Package Length (mm) | 6.6(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 2.63(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 90000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 33nC |
| Typical Gate Charge @ Vgs | 33@10VnC |
| Maximum Gate Source Voltage | ±30V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 525V |
| Maximum Drain Source Resistance | 1150@10VmOhm |
| Typical Input Capacitance @ Vds | 870@50VpF |
| Maximum Continuous Drain Current | 6A |
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