STD7N52K3
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Краткое описание:
525V 6A N-CH MOSFET DPAK 850mR RdsOn
Дополнительная информация
N-channel Power MOSFET featuring 525V drain-source breakdown voltage and 6A continuous drain current. Offers a low 850mΩ maximum drain-source on-resistance. Designed for surface mounting in a DPAK package, this component operates within a temperature range of -55°C to 150°C and boasts 90W power dissipation. Key switching characteristics include a 13ns turn-on delay and 19ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 19ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 980mR |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 737pF |
| Power Dissipation | 90W |
| Threshold Voltage | 3.75V |
| Turn-On Delay Time | 13ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 36ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 90W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 850mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Voltage (Vdss) | 525V |
| Drain-source On Resistance-Max | 850mR |
| Drain to Source Breakdown Voltage | 525V |
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