STD7NM60N
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Краткое описание:
600V N-CH MOSFET, 5A, 0.9 Ohm, DPAK, Surface Mount
Дополнительная информация
N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 5A continuous drain current. Offers a low 0.8 Ohm typical drain-source on-resistance and 45W power dissipation. Packaged in a surface-mount DPAK with a 363pF input capacitance and fast switching times including a 7ns turn-on delay. Operates across a wide temperature range of -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| Series | MDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 900mR |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 363pF |
| Power Dissipation | 45W |
| Threshold Voltage | 3V |
| Turn-On Delay Time | 7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 26ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 45W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 900mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 900mR |
| Drain to Source Breakdown Voltage | 600V |
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