STD7NM80
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Краткое описание:
800V N-Channel MOSFET, 6.5A, 1.05 Ohm, DPAK
Дополнительная информация
N-channel Power MOSFET featuring 800V drain-source breakdown voltage and 6.5A continuous drain current. This surface-mount device offers a low 1.05 Ohm maximum drain-source on-resistance and a 90W maximum power dissipation. Designed with a DPAK package, it includes fast switching characteristics with typical turn-on delay of 20ns and fall time of 10ns. Operating temperature range spans from -55°C to 150°C, with RoHS compliance.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| Series | MDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.05R |
| Nominal Vgs | 4V |
| Termination | SMD/SMT |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 620pF |
| Power Dissipation | 90W |
| Threshold Voltage | 4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 20ns |
| Dual Supply Voltage | 800V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 35ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 90W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.05R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 6.5A |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 1.05R |
| Drain to Source Breakdown Voltage | 800V |
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