STD80N10F7
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Краткое описание:
N-Ch MOSFET 100V 70A 10mR DPAK Power Transistor
Дополнительная информация
N-channel power MOSFET featuring 100V drain-source breakdown voltage and 70A continuous drain current. Offers low 0.0085 Ohm typical drain-source on-resistance (Rds On) and a maximum of 10mR. Designed for surface mount applications in a TO-252-3 (DPAK) package, this component boasts a maximum power dissipation of 85W and operates within a temperature range of -55°C to 175°C. Key switching characteristics include a 19ns turn-on delay and 13ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| Series | DeepGATE™, STripFET™ VII |
| Weight | 0.139332oz |
| Polarity | N-CHANNEL |
| Fall Time | 13ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 10mR |
| Package/Case | TO-252-3 |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 3.1nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 19ns |
| Turn-Off Delay Time | 36ns |
| Max Power Dissipation | 85W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 10mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 70A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain to Source Breakdown Voltage | 100V |
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