STD80N4F6
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Краткое описание:
N-Ch MOSFET 40V 80A 6mR DPAK Power Transistor
Дополнительная информация
Automotive-grade N-channel power MOSFET featuring 40V drain-source breakdown voltage and 80A continuous drain current. Offers low 5.5 mOhm typical drain-source on-resistance for efficient power switching. Designed for surface mounting in a DPAK package, operating from -55°C to 175°C with a maximum power dissipation of 70W. Includes fast switching characteristics with turn-on delay of 10.5ns and fall time of 11.9ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| Series | STripFET™ VI, DeepGATE™ |
| Polarity | N-CHANNEL |
| Fall Time | 11.9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 6mR |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 2.15nF |
| Power Dissipation | 70W |
| Turn-On Delay Time | 10.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 46.1ns |
| Max Power Dissipation | 70W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 6mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 6MR |
| Drain to Source Breakdown Voltage | 40V |
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