STD80N6F6
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Краткое описание:
60V 80A N-CH MOSFET DPAK 6.5mR RdsOn
Дополнительная информация
Automotive-grade N-channel power MOSFET featuring 60V drain-source breakdown voltage and low 4.4 mOhm typical on-resistance. This surface-mount device in a DPAK package offers a continuous drain current of 80A and a maximum power dissipation of 120W. Operating across a wide temperature range of -55°C to 175°C, it supports up to 20V gate-source voltage. The component is RoHS compliant and part of the DeepGATE™, STripFET™ VI series.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.35mm |
| Height | 4.6mm |
| Length | 10.4mm |
| Series | DeepGATE™, STripFET™ VI |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 6.5mR |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 7.48nF |
| Power Dissipation | 120W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Max Power Dissipation | 120W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 6.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 5mR |
| Drain to Source Breakdown Voltage | 60V |
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