STD86N3LH5

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STD86N3LH5 - Stmicroelectronics
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Краткое описание: N-Ch 30V 80A 5mR MOSFET DPAK
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

Automotive-grade N-channel power MOSFET featuring 30V drain-source breakdown voltage and 80A continuous drain current. Offers a low 0.0045 Ohm typical drain-source on-resistance and 5mR maximum Rds On. Designed for surface mounting in a DPAK package, this component operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 70W. Key switching characteristics include a 6ns turn-on delay and 10.8ns fall time.
RoHS Compliant
Mount Surface Mount
Series STripFET™ V
Polarity N-CHANNEL
Fall Time 10.8ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 5mR
Package/Case DPAK
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 1.85nF
Power Dissipation 70W
Number of Elements 1
Turn-On Delay Time 6ns
Radiation Hardening No
Turn-Off Delay Time 23.6ns
Max Power Dissipation 70W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 5mR
Gate to Source Voltage (Vgs) 22V
Continuous Drain Current (ID) 80A
Drain to Source Voltage (Vdss) 30V
Drain-source On Resistance-Max 5MR
Drain to Source Breakdown Voltage 30V

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