STD8N80K5
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Краткое описание:
800V 6A N-CH MOSFET DPAK 950mR Rds(on)
Дополнительная информация
N-channel Power MOSFET, 800V drain-source breakdown voltage, 6A continuous drain current, and 950mΩ maximum drain-source on-resistance. Features a DPAK surface-mount package with 110W maximum power dissipation. Operates from -55°C to 150°C with typical fall time of 20ns and turn-off delay of 32ns. Includes 450pF input capacitance and 30V gate-to-source voltage rating. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| Series | SuperMESH5™ |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 950mR |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 450pF |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 32ns |
| Max Power Dissipation | 110W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 950mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 950mR |
| Drain to Source Breakdown Voltage | 800V |
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