STD8NF25

Производится
STD8NF25 - Stmicroelectronics
Увеличить
Краткое описание: 250V N-Ch MOSFET, 8A, 420mR RdsOn, DPAK
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Power MOSFET featuring 250V drain-source breakdown voltage and 8A continuous drain current. Surface mount DPAK package offers low 318mOhm typical drain-source on-resistance. Designed for efficient switching with fast 6ns fall time, 13ns turn-on delay, and 26ns turn-off delay. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 72W.
RoHS Compliant
Mount Surface Mount
Series STripFET™ II
Polarity N-CHANNEL
Fall Time 6ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 420mR
Package/Case DPAK
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 500pF
Power Dissipation 72W
Number of Elements 1
Turn-On Delay Time 13ns
Radiation Hardening No
Turn-Off Delay Time 26ns
Max Power Dissipation 72W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 420mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 8A
Drain to Source Voltage (Vdss) 250V
Drain-source On Resistance-Max 420MR
Drain to Source Breakdown Voltage 250V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.