STD8NM60ND

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STD8NM60ND - Stmicroelectronics
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Краткое описание: 600V 7A N-CH MOSFET DPAK 700mR
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel power MOSFET featuring 600V drain-source breakdown voltage and 7A continuous drain current. Offers a low 700mΩ maximum drain-source on-resistance. Designed for surface mounting in a DPAK package, this component boasts a 70W power dissipation and operates within a -55°C to 150°C temperature range. Key switching characteristics include a 9ns turn-on delay and 22ns fall time.
RoHS Compliant
Mount Surface Mount
Series FDmesh™
Polarity N-CHANNEL
Fall Time 22ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 700mR
Nominal Vgs 4V
Package/Case DPAK
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 560pF
Power Dissipation 70W
Threshold Voltage 4V
Number of Elements 1
Turn-On Delay Time 9ns
Radiation Hardening No
Turn-Off Delay Time 37ns
Reach SVHC Compliant No
Max Power Dissipation 70W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 590mR
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 7A
Drain to Source Voltage (Vdss) 600V
Drain-source On Resistance-Max 700mR
Drain to Source Breakdown Voltage 600V

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