STD95N3LLH6
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Краткое описание:
30V 80A N-CH MOSFET, 4.2mR Rds On, DPAK, Power
Дополнительная информация
N-CHANNEL Power MOSFET featuring 30V drain-source breakdown voltage and 80A continuous drain current. Offers a low 4.2mΩ maximum drain-source on-resistance. This surface mount component is housed in a DPAK package, suitable for high-power applications with a 70W power dissipation rating. Operates across a wide temperature range from -55°C to 175°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| Series | DeepGATE™, STripFET™ VI |
| Polarity | N-CHANNEL |
| Fall Time | 23.4ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 4.2mR |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 2.2nF |
| Power Dissipation | 70W |
| Threshold Voltage | 1V |
| Turn-On Delay Time | 19ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 24.5ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 70W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.2mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 4.2MR |
| Drain to Source Breakdown Voltage | 30V |
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