STD9N60M2
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Краткое описание:
650V 5.5A N-CH MOSFET DPAK 780mR Rds(on)
Дополнительная информация
N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 5.5A continuous drain current. Offers 780mΩ maximum drain-source on-resistance and 60W power dissipation. Designed for surface mounting in a DPAK package, this component boasts fast switching characteristics with turn-on delay of 8.8ns and fall time of 13.5ns. Operating temperature range spans -55°C to 150°C, with RoHS compliance and lead-free construction.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| Series | MDmesh™ II Plus |
| Polarity | N-CHANNEL |
| Fall Time | 13.5ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 780mR |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 320pF |
| Power Dissipation | 60W |
| Turn-On Delay Time | 8.8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 22ns |
| Max Power Dissipation | 60W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 780mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 5.5A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 780mR |
| Drain to Source Breakdown Voltage | 650V |
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