STE180NE10

Снят с производства
STE180NE10 - Stmicroelectronics
Краткое описание: 180A 100V 6mR N-CH Power MOSFET
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-Channel Power MOSFET featuring 180A continuous drain current and 100V drain-to-source breakdown voltage. Offers a low 6mΩ drain-to-source resistance. Designed for chassis mounting with a maximum power dissipation of 360W and an operating temperature range of -55°C to 150°C. Includes 2.5kV isolation voltage and is RoHS compliant.
RoHS Compliant
Mount Chassis Mount
Series STripFET™
Polarity N-CHANNEL
Fall Time 440ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 6R
Nominal Vgs 3V
Package/Case SOT
Current Rating 180A
RoHS Compliant Yes
DC Rated Voltage 100V
Package Quantity 10
Input Capacitance 21nF
Isolation Voltage 2.5kV
Power Dissipation 360W
Threshold Voltage 3V
Turn-Off Delay Time 430ns
Reach SVHC Compliant No
Max Power Dissipation 360W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 6mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 180A
Drain to Source Voltage (Vdss) 100V
Drain to Source Breakdown Voltage 100V

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