STE53NC50
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Краткое описание:
500V 53A N-CH MOSFET 80mR RdsOn
Дополнительная информация
N-channel PowerMESH™ II MOSFET featuring 500V drain-source breakdown voltage and 53A continuous drain current. Offers low 80mΩ drain-source on-resistance, 460W maximum power dissipation, and fast switching with 46ns turn-on delay and 38ns fall time. Designed for chassis or panel mounting with screw terminals, this RoHS compliant component operates from -65°C to 150°C.
| RoHS | Compliant |
| Mount | Chassis Mount, Panel, Screw |
| Width | 25.5mm |
| Height | 9.1mm |
| Length | 38.2mm |
| Series | PowerMESH™ II |
| Polarity | N-CHANNEL |
| Fall Time | 38ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 80mR |
| Current Rating | 53A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 500V |
| Package Quantity | 10 |
| Input Capacitance | 11.2nF |
| Isolation Voltage | 2.5kV |
| Power Dissipation | 460W |
| Threshold Voltage | 3V |
| Turn-On Delay Time | 46ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 460W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 80mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 53A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 80mR |
| Drain to Source Breakdown Voltage | 500V |
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