STE70NM50
Снят с производства
Краткое описание:
500V 70A N-Channel MOSFET, 50mR Rds(on)
Дополнительная информация
N-Channel MOSFET featuring 500V drain-source breakdown voltage and 70A continuous drain current. Offers a low 50mΩ drain-source on-resistance. Designed with Zener protection and a 4V threshold voltage, this MDmesh™ series component boasts a 600W maximum power dissipation. Suitable for chassis mount applications with a 46ns fall time and 51ns turn-on delay.
| RoHS | Compliant |
| Mount | Chassis Mount, Screw |
| Width | 25.5mm |
| Height | 9.1mm |
| Length | 38.2mm |
| Series | MDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 46ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 50mR |
| Current Rating | 70A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 500V |
| Package Quantity | 10 |
| Input Capacitance | 7.5nF |
| Power Dissipation | 600W |
| Threshold Voltage | 4V |
| Turn-On Delay Time | 51ns |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 600W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 50mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 70A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 50mR |
| Drain to Source Breakdown Voltage | 500V |
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