STE70NM60
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Краткое описание:
600V 70A N-CH MOSFET, 55mR RdsOn, 600W PD
Дополнительная информация
N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 70A continuous drain current. Offers low on-resistance of 55mΩ (max) and a maximum power dissipation of 600W. Designed for chassis mount applications with a Zener-protected gate and MDmesh™ technology. Includes fast switching characteristics with a typical turn-on delay of 55ns and fall time of 76ns. Operates across a wide temperature range from -65°C to 150°C.
| RoHS | Compliant |
| Mount | Chassis Mount, Screw |
| Series | MDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 76ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 55mR |
| Current Rating | 70A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Package Quantity | 10 |
| Input Capacitance | 7.3nF |
| Power Dissipation | 600W |
| Threshold Voltage | 4V |
| Turn-On Delay Time | 55ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 600W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 55mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 70A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 55MR |
| Drain to Source Breakdown Voltage | 600V |
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