STF10NM60N

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STF10NM60N - Stmicroelectronics
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Краткое описание: 600V 10A N-Ch MOSFET TO-220FP 0.53 Ohm
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Power MOSFET featuring 600V drain-source voltage and 10A continuous drain current. This through-hole component offers a low 0.53 Ohm typical on-resistance and 550mR max. With a 3V threshold voltage and fast switching times including 10ns turn-on delay and 15ns fall time, it is suitable for demanding applications. Packaged in TO-220-3, it operates from -55°C to 150°C and has a maximum power dissipation of 25W.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 16.4mm
Length 10.4mm
Series MDmesh™
Fall Time 15ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 550mR
Package/Case TO-220-3
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 540pF
Threshold Voltage 3V
Turn-On Delay Time 10ns
Radiation Hardening No
Turn-Off Delay Time 32ns
Reach SVHC Compliant No
Max Power Dissipation 25W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 10A
Drain to Source Voltage (Vdss) 600V

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