STF11NM50N
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Краткое описание:
500V N-CH MOSFET, 8.5A, 470mR RdsOn, TO-220FP
Дополнительная информация
N-channel Power MOSFET featuring 500V drain-source breakdown voltage and 8.5A continuous drain current. Offers a low 470mΩ typical drain-source on-resistance. Designed for through-hole mounting in a TO-220FP package, this component boasts fast switching speeds with a 10ns fall time. Maximum power dissipation is rated at 25W, with operating temperatures ranging from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 16.4mm |
| Length | 10.4mm |
| Series | MDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 470mR |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 547pF |
| Power Dissipation | 25W |
| Threshold Voltage | 3V |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 33ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 470mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 8.5A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 470MR |
| Drain to Source Breakdown Voltage | 500V |
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