STF12N65M5
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Краткое описание:
650V 8.5A N-CH MOSFET TO-220FP 430mR RdsOn
Дополнительная информация
N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 8.5A continuous drain current. This device offers a low 0.39 Ohm typical drain-source on-resistance and operates within a -55°C to 150°C temperature range. Packaged in a TO-220FP (TO-220-5) through-hole mount, it boasts a 25W power dissipation and fast switching characteristics with a 15.6ns turn-off delay.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 16.4mm |
| Length | 10.4mm |
| Series | MDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 24ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 430mR |
| Package/Case | TO-220-5 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 900pF |
| Power Dissipation | 25W |
| Threshold Voltage | 4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 22.6ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15.6ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 430mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 8.5A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 430mR |
| Drain to Source Breakdown Voltage | 650V |
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