STF12NM60N
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Краткое описание:
600V 10A N-CH MOSFET, 410mR RdsOn, TO-220
Дополнительная информация
N-channel power MOSFET featuring 600V drain-source breakdown voltage and 10A continuous drain current. Offers 410mΩ maximum drain-source on-resistance at a nominal gate-source voltage of 3V. Designed for through-hole mounting in a TO-220-3 package, this RoHS compliant component has a maximum power dissipation of 25W and operates between -55°C and 150°C. Key switching characteristics include a 10ns fall time and 60ns turn-off delay time.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | MDmesh™ II |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 410mR |
| Nominal Vgs | 3V |
| Termination | Through Hole |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 960pF |
| Power Dissipation | 25W |
| Threshold Voltage | 3V |
| Dual Supply Voltage | 600V |
| Turn-Off Delay Time | 60ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 410mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 410mR |
| Drain to Source Breakdown Voltage | 600V |
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