STF13N95K3
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Краткое описание:
950V N-Channel MOSFET, 10A, 850mR, TO-220FP
Дополнительная информация
N-channel power MOSFET featuring 950V drain-source breakdown voltage and 10A continuous drain current. Offers 850mΩ maximum drain-source on-resistance and 40W maximum power dissipation. Designed for through-hole mounting in a TO-220FP package, this component exhibits a typical fall time of 21ns and turn-off delay of 50ns. Operates within a temperature range of -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | SuperMESH3™ |
| Polarity | N-CHANNEL |
| Fall Time | 21ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 850mR |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 1.62nF |
| Power Dissipation | 40W |
| Number of Elements | 1 |
| Turn-On Delay Time | 18ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 50ns |
| Max Power Dissipation | 40W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 850mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Voltage (Vdss) | 950V |
| Drain-source On Resistance-Max | 850MR |
| Drain to Source Breakdown Voltage | 950V |
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