STF13NM60ND

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STF13NM60ND - Stmicroelectronics
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Краткое описание: 600V 11A N-CH MOSFET TO-220FP, 380mR Rds(on)
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Power MOSFET featuring 600V drain-source voltage and 11A continuous drain current. This through-hole component offers a low 0.32 Ohm typical drain-source resistance and a fast integrated diode. Packaged in TO-220FP, it operates from -55°C to 150°C with a maximum power dissipation of 25W. Key switching characteristics include a 15.4ns fall time and 9.6ns turn-off delay.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 16.4mm
Length 10.6mm
Series FDmesh™ II
Polarity N-CHANNEL
Fall Time 15.4ns
Packaging Rail/Tube
Rds On Max 380mR
Package/Case TO-220-3
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 845pF
Power Dissipation 25W
Turn-On Delay Time 46.5ns
Radiation Hardening No
Turn-Off Delay Time 9.6ns
Max Power Dissipation 25W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 380mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 11A
Drain to Source Voltage (Vdss) 600V
Drain to Source Breakdown Voltage 650V

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