N-channel Power MOSFET featuring 800V drain-source voltage and 14A continuous drain current. This single-element enhancement mode MOSFET utilizes SuperMESH process technology and offers a low 375mOhm drain-source resistance at 10V. Packaged in a TO-220FP fullpak with 3 through-hole pins and a tab, it supports mounting on PCBs. Operating temperature range is -55°C to 150°C.
| PCB |
3 |
| Tab |
Tab |
| ECCN |
EAR99 |
| PPAP |
No |
| EU RoHS |
Yes with Exemption |
| Category |
Power MOSFET |
| HTS Code |
8541290095 |
| Mounting |
Through Hole |
| Cage Code |
SCR76 |
| Pin Count |
3 |
| Automotive |
No |
| Lead Shape |
Through Hole |
| Schedule B |
8541290080 |
| Channel Mode |
Enhancement |
| Channel Type |
N |
| Package/Case |
TO-220FP |
| AEC Qualified |
No |
| Configuration |
Single |
| RoHS Versions |
2011/65/EU, 2015/863 |
| Pin Pitch (mm) |
2.7(Max) |
| Package Material |
Plastic |
| Basic Package Type |
Through Hole |
| Package Weight (g) |
2.04 |
| Package Width (mm) |
4.6(Max) |
| Process Technology |
SuperMESH |
| Package Description |
Transistor Outline Package Fullpak |
| Package Family Name |
TO-220 |
| Package Height (mm) |
16.4(Max) |
| Package Length (mm) |
10.4(Max) |
| Seated Plane Height (mm) |
20(Max) |
| Max Operating Temperature |
150°C |
| Maximum Power Dissipation |
35000mW |
| Min Operating Temperature |
-55°C |
| Typical Gate Charge @ 10V |
32nC |
| Typical Gate Charge @ Vgs |
32@10VnC |
| Maximum Gate Source Voltage |
±30V |
| Number of Elements per Chip |
1 |
| Maximum Drain Source Voltage |
800V |
| Maximum Gate Threshold Voltage |
5V |
| Maximum Drain Source Resistance |
375@10VmOhm |
| Typical Input Capacitance @ Vds |
1100@100VpF |
| Maximum Continuous Drain Current |
14A |