STF15NM60ND

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STF15NM60ND - Stmicroelectronics
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Краткое описание: 600V 14A N-CH MOSFET TO-220FP 299mR Rds(on)
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel Power MOSFET featuring 600V drain-to-source breakdown voltage and 14A continuous drain current. This component offers a low 0.27 Ohm typical drain-to-source resistance and operates within a -55°C to 150°C temperature range. Packaged in a TO-220FP with through-hole mounting, it boasts fast switching characteristics with turn-on delay of 17ns and fall time of 28ns. Maximum power dissipation is rated at 30W, and it is RoHS compliant.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 16.4mm
Length 10.4mm
Series FDmesh™ II
Polarity N-CHANNEL
Fall Time 28ns
Packaging Rail/Tube
Rds On Max 299mR
Package/Case TO-220-3
RoHS Compliant Yes
Input Capacitance 1.25nF
Power Dissipation 30W
Threshold Voltage 4V
Turn-On Delay Time 17ns
Radiation Hardening No
Turn-Off Delay Time 47ns
Reach SVHC Compliant No
Max Power Dissipation 30W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 299mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 14A
Drain to Source Voltage (Vdss) 600V
Drain to Source Breakdown Voltage 600V

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