STF16NK60Z
Снят с производства
Краткое описание:
600V 14A N-CH Power MOSFET TO-220FP
Дополнительная информация
N-channel enhancement mode power MOSFET featuring 600V drain-source voltage and 14A continuous drain current. This single-element transistor offers a low 420mOhm drain-source resistance at 10V gate-source voltage and a typical gate charge of 86nC. Encased in a TO-220FP package with 3 pins and a tab, it supports through-hole mounting. Maximum power dissipation is 40W, with an operating temperature range of -55°C to 150°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | SCR76 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-220FP |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.7(Max) |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Weight (g) | 2.04 |
| Package Width (mm) | 4.6(Max) |
| Package Description | Transistor Outline Package Fullpak |
| Package Family Name | TO-220 |
| Package Height (mm) | 16.4(Max) |
| Package Length (mm) | 10.4(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 20(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 40000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 86nC |
| Typical Gate Charge @ Vgs | 86@10VnC |
| Maximum Gate Source Voltage | ±30V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600V |
| Maximum Drain Source Resistance | 420@10VmOhm |
| Typical Input Capacitance @ Vds | 2650@25VpF |
| Maximum Continuous Drain Current | 14A |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
