STF18N60M2

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STF18N60M2 - Stmicroelectronics
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Краткое описание: 600V 13A N-CH MOSFET TO-220FP 255mR Rds(on)
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Power MOSFET featuring 600V drain-to-source breakdown voltage and 13A continuous drain current. This through-hole component offers a low 255mΩ typical drain-to-source resistance, with a maximum of 280mΩ. Operating within a -55°C to 150°C temperature range, it boasts a 25W power dissipation and is housed in a TO-220-3 package. Key switching characteristics include a 10.6ns fall time, 47ns turn-off delay, and 12ns turn-on delay.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 16.4mm
Length 10.4mm
Series MDmesh™ II Plus
Polarity N-CHANNEL
Fall Time 10.6ns
Packaging Rail/Tube
Rds On Max 280mR
Package/Case TO-220-3
RoHS Compliant Yes
Package Quantity 1000
Input Capacitance 791pF
Power Dissipation 25W
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 12ns
Radiation Hardening No
Turn-Off Delay Time 47ns
Max Power Dissipation 25W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 255mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 13A
Drain to Source Voltage (Vdss) 600V
Drain to Source Breakdown Voltage 600V

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