STF18NM80
Производится
Увеличить
Краткое описание:
800V N-CH MOSFET, 17A, 250mR, TO-220FP
Дополнительная информация
N-channel power MOSFET featuring 800V drain-to-source breakdown voltage and 17A continuous drain current. Offers low on-resistance with a maximum of 295mΩ at 10Vgs. Designed for through-hole mounting in a TO-220FP package, this component boasts a maximum power dissipation of 40W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 18ns turn-on delay and 50ns fall time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 16.4mm |
| Length | 10.4mm |
| Series | MDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 50ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 295mR |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Input Capacitance | 2.07nF |
| Power Dissipation | 40W |
| Threshold Voltage | 4V |
| Turn-On Delay Time | 18ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 96ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 40W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 250mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Voltage (Vdss) | 800V |
| Drain to Source Breakdown Voltage | 800V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
