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Краткое описание:
200V 18A N-CH MOSFET TO-220FP Power Transistor
Дополнительная информация
N-channel power MOSFET featuring 200V drain-source breakdown voltage and 18A continuous drain current. This through-hole component offers a low 0.10 Ohm typical drain-source on-resistance and a maximum of 125mR. Designed for efficient switching with fast turn-on (15ns) and turn-off (40ns) delay times, it operates within a -55°C to 175°C temperature range and has a 30W power dissipation. Packaged in a TO-220FP format, this RoHS compliant device is ideal for power management applications.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 16.4mm |
| Length | 10.4mm |
| Series | STripFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 125mR |
| Package/Case | TO-220-3 |
| Current Rating | 18A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 200V |
| Package Quantity | 1000 |
| Input Capacitance | 940pF |
| Power Dissipation | 30W |
| Threshold Voltage | 3V |
| Number of Elements | 1 |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 30W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 125mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 100mR |
| Drain to Source Breakdown Voltage | 200V |
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