STF20NM65N
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Краткое описание:
650V 15A N-CH MOSFET, 270mR, TO-220, Power Transistor
Дополнительная информация
N-Channel Power MOSFET featuring 650V drain-source breakdown voltage and 15A continuous drain current. Offers a maximum drain-source on-resistance of 270mΩ at 10Vgs. Designed for through-hole mounting in a TO-220-3 package, with a maximum power dissipation of 40W. Includes fast switching characteristics with a typical fall time of 20ns and turn-on delay of 15ns. RoHS compliant and operates across a wide temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 16.4mm |
| Length | 10.4mm |
| Series | MDmesh™ II |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 270mR |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Input Capacitance | 1.28nF |
| Power Dissipation | 40W |
| Threshold Voltage | 3V |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 75ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 30W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 190mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 270MR |
| Drain to Source Breakdown Voltage | 650V |
