STF21NM50N

Снят с производства
STF21NM50N - Stmicroelectronics
Краткое описание: 500V 18A N-CH MOSFET, 190mR, TO-220FP
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel power MOSFET featuring 500V drain-source breakdown voltage and 18A continuous drain current. This through-hole component offers a low 190mΩ drain-source on-resistance and 30W maximum power dissipation. Operating across a wide temperature range from -55°C to 150°C, it includes a 30ns fall time and 90ns turn-off delay time. The MOSFET is housed in a TO-220-3 package and is RoHS compliant.
RoHS Compliant
Mount Through Hole
Series MDmesh™ II
Polarity N-CHANNEL
Fall Time 30ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 190mR
Package/Case TO-220-3
Current Rating 18A
RoHS Compliant Yes
DC Rated Voltage 500V
Package Quantity 50
Input Capacitance 1.95nF
Power Dissipation 30W
Turn-Off Delay Time 90ns
Max Power Dissipation 30W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 190mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 18A
Drain to Source Voltage (Vdss) 500V
Drain-source On Resistance-Max 190mR
Drain to Source Breakdown Voltage 500V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.