STF25NM60N
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Краткое описание:
600V 21A N-Channel Power MOSFET TO-220 160mR
Дополнительная информация
N-channel power MOSFET featuring 600V drain-source breakdown voltage and 21A continuous drain current. Offers a low 160mΩ maximum drain-source on-resistance at a nominal 3V gate-source voltage. Designed for through-hole mounting in a TO-220-3 package, this RoHS compliant component boasts a 40W maximum power dissipation and operates within a -55°C to 150°C temperature range. Key switching parameters include a 24ns fall time and 94ns turn-off delay.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | MDmesh™ II |
| Polarity | N-CHANNEL |
| Fall Time | 24ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 160mR |
| Nominal Vgs | 3V |
| Termination | Through Hole |
| Package/Case | TO-220-3 |
| Current Rating | 20A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Package Quantity | 50 |
| Input Capacitance | 2.4nF |
| Power Dissipation | 40W |
| Threshold Voltage | 3V |
| Turn-On Delay Time | 24.5ns |
| Dual Supply Voltage | 600V |
| On-State Resistance | 170mR |
| Radiation Hardening | No |
| Turn-Off Delay Time | 94ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 40W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 170mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 21A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 160mR |
| Drain to Source Breakdown Voltage | 600V |
