STF25NM60ND

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STF25NM60ND - Stmicroelectronics
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Краткое описание: 600V 21A N-CH MOSFET TO-220FP, 160mR RdsOn
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel power MOSFET featuring 600V drain-to-source breakdown voltage and 21A continuous drain current. Offers 160mΩ typical drain-to-source resistance and 40W maximum power dissipation. Designed for through-hole mounting in a TO-220-3 package, this component includes a fast diode and operates within a -55°C to 150°C temperature range. RoHS compliant with a 4ns fall time and 60ns turn-on delay.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 16.4mm
Length 10.4mm
Series FDmesh™
Polarity N-CHANNEL
Fall Time 40ns
Packaging Rail/Tube
Rds On Max 160mR
Package/Case TO-220-3
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 2.4nF
Power Dissipation 40W
Threshold Voltage 4V
Turn-On Delay Time 60ns
Radiation Hardening No
Turn-Off Delay Time 50ns
Reach SVHC Compliant No
Max Power Dissipation 40W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 160mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 21A
Drain to Source Voltage (Vdss) 600V
Drain to Source Breakdown Voltage 600V

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