STF26NM60N

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STF26NM60N - Stmicroelectronics
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Краткое описание: 600V 20A N-Ch MOSFET TO-220FP 0.135 Ohm
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Power MOSFET featuring 600V drain-source voltage and 20A continuous drain current. This through-hole component offers a low 0.135 Ohm typical on-resistance (165mR max) and is housed in a TO-220-3 package. Key switching characteristics include a 13ns turn-on delay and 50ns fall time, with a 1.8nF input capacitance. Maximum power dissipation is rated at 30W, operating within a -55°C to 150°C temperature range.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 16.4mm
Length 10.4mm
Series MDmesh™
Fall Time 50ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 165mR
Nominal Vgs 3V
Package/Case TO-220-3
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 1.8nF
Turn-On Delay Time 13ns
Radiation Hardening No
Turn-Off Delay Time 85ns
Reach SVHC Compliant No
Max Power Dissipation 30W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 20A
Drain to Source Voltage (Vdss) 600V

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