STF26NM60ND

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STF26NM60ND - Stmicroelectronics
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Краткое описание: 600V 21A N-CH MOSFET TO-220FP 145mR RdsOn
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 21A continuous drain current. This through-hole component offers a low 0.145 Ohm typical drain-source resistance and is housed in a TO-220FP package. Designed for efficient switching, it exhibits fast switching characteristics with turn-on delay of 22ns and fall time of 27.5ns. Maximum power dissipation is 35W, with an operating temperature range of -55°C to 150°C.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 16.4mm
Length 10.4mm
Series FDmesh™ II
Weight 0.01164oz
Polarity N-CHANNEL
Fall Time 27.5ns
Packaging Rail/Tube
Rds On Max 175mR
Package/Case TO-220-3
Package Quantity 50
Input Capacitance 1.817nF
Number of Channels 1
Turn-On Delay Time 22ns
Turn-Off Delay Time 69ns
Max Power Dissipation 35W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 145mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 21A
Drain to Source Voltage (Vdss) 600V
Drain to Source Breakdown Voltage 600V

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