STF2N80K5
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Краткое описание:
800V N-CH MOSFET, 2A, 3.5R RdsOn, TO-220FP
Дополнительная информация
N-channel Power MOSFET featuring 800V drain-source breakdown voltage and 2A continuous drain current. This through-hole component offers a typical on-resistance of 3.5 Ohms, with a maximum of 4.5 Ohms, and a 30V gate-source voltage rating. Designed for high-temperature operation up to 150°C, it includes a 95pF input capacitance and fast switching times with 8ns turn-on and 19ns turn-off delays. Packaged in a TO-220FP housing, this RoHS compliant device supports a maximum power dissipation of 20W.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 16.4mm |
| Length | 10.4mm |
| Series | SuperMESH5™ |
| Weight | 0.01164oz |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 4.5R |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 95pF |
| Power Dissipation | 20W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 8ns |
| Turn-Off Delay Time | 19ns |
| Max Power Dissipation | 20W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.5R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Voltage (Vdss) | 800V |
| Drain to Source Breakdown Voltage | 800V |
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