STF33N60M2

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STF33N60M2 - Stmicroelectronics(ST)
Краткое описание: 600V 26A N-CH MOSFET TO-220FP 108mR RdsOn
Производитель Stmicroelectronics(ST)
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 26A continuous drain current. Offers a low 0.108 Ohm typical drain-source resistance, with a maximum of 125mR. Designed for through-hole mounting in a TO-220FP package, this component boasts fast switching speeds with a 16ns turn-on delay and 9ns fall time. Maximum power dissipation is 35W, operating across a wide temperature range from -55°C to 150°C.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 16.4mm
Length 10.4mm
Series MDmesh™ II Plus
Weight 0.01164oz
Polarity N-CHANNEL
Fall Time 9ns
Packaging Rail/Tube
Rds On Max 125mR
Package/Case TO-220-3
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 1.781nF
Number of Channels 1
Turn-On Delay Time 16ns
Turn-Off Delay Time 109ns
Max Power Dissipation 35W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 108mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 26A
Drain to Source Voltage (Vdss) 600V
Drain to Source Breakdown Voltage 600V

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