STF38N65M5
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Краткое описание:
650V 30A N-Channel MOSFET TO-220FP 95mR Rds On
Дополнительная информация
N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 30A continuous drain current. This through-hole component offers a low 95mΩ maximum drain-source on-resistance and a 35W power dissipation. Designed with a TO-220FP package, it exhibits a typical fall time of 9ns and turn-on/off delay times of 66ns. Operating across a wide temperature range of -55°C to 150°C, this RoHS compliant device is suitable for demanding applications.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 16.4mm |
| Length | 10.4mm |
| Series | MDmesh™ V |
| Polarity | N-CHANNEL |
| Fall Time | 9ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 95mR |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Input Capacitance | 3nF |
| Power Dissipation | 35W |
| Number of Elements | 1 |
| Turn-On Delay Time | 66ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 66ns |
| Max Power Dissipation | 35W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 95mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 95mR |
| Drain to Source Breakdown Voltage | 650V |
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