STF3NK100Z

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STF3NK100Z - Stmicroelectronics
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Краткое описание: 1000V N-CH MOSFET, 2.5A, 6 Ohm, TO-220FP
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel SuperMESH™ Power MOSFET featuring 1000V drain-source breakdown voltage and 2.5A continuous drain current. This through-hole component offers a low 5.4 Ohm typical drain-source on-resistance and 25W power dissipation. Operating across a wide temperature range of -55°C to 150°C, it is housed in a TO-220FP package. Key switching characteristics include a 15ns turn-on delay and 32ns fall time.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 16.4mm
Length 10.4mm
Series SuperMESH™
Polarity N-CHANNEL
Fall Time 32ns
Packaging Rail/Tube
Rds On Max 6R
Package/Case TO-220-3
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 601pF
Power Dissipation 25W
Threshold Voltage 3.75V
Turn-On Delay Time 15ns
Radiation Hardening No
Turn-Off Delay Time 39ns
Reach SVHC Compliant No
Max Power Dissipation 25W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 6R
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 2.5A
Drain to Source Voltage (Vdss) 1kV
Drain to Source Breakdown Voltage 1kV

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