STF4N62K3
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Краткое описание:
620V N-Channel MOSFET, 3.8A, 2 Ohm, TO-220FP
Дополнительная информация
N-channel SuperMESH3™ Power MOSFET, 620V drain-source breakdown voltage, 3.8A continuous drain current, and 2 Ohm max drain-source on-resistance. Features include 10ns turn-on delay, 29ns turn-off delay, and 19ns fall time. Packaged in a TO-220-3 through-hole mount, this RoHS compliant component operates from -55°C to 150°C with 25W max power dissipation.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 16.4mm |
| Length | 10.4mm |
| Series | SuperMESH3™ |
| Polarity | N-CHANNEL |
| Fall Time | 19ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 2R |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Input Capacitance | 550pF |
| Power Dissipation | 25W |
| Threshold Voltage | 3.75V |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 29ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 3.8A |
| Drain to Source Voltage (Vdss) | 620V |
| Drain-source On Resistance-Max | 2R |
| Drain to Source Breakdown Voltage | 620V |
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